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TC96C55 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
FEATURES
s s s s s Controllable Duty Cycle Wide Operating Range ............................. 5V to 18V High Peak Output Current .................................. 3A High Capacitive Load Drive Capability .................................... 1800pF in 20nsec Short Delay Time ............................. < 150nsec Typ
GENERAL DESCRIPTION
The TC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits where high-current pulses are needed in an economical form. The TC96C555 uses TelCom Semiconductors' new Tough CMOSTM process. The output drive capability is similar to the TC4423/4/5 MOSFET Drivers, which can switch in 25nsec into a capacitive load of 1,800pF. The TC96C555 will not latch up under any conditions within their power and voltage ratings. They can accept, without damage, up to 1.5A of reverse current (of either polarity) being forced back into the output. All terminals are also fully protected against up to 4kV of electrostatic discharge. The peak output is rated at 3A. Split outputs permits driving of an external pair of MOSFETS, with controllable cross conduction between upper and lower devices. PIN CONFIGURATIONS (DIP and SOIC) Operating Temp Range 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C
VR2 VIN VREF VR1 1 2 3 4
TC96C555CPA TC96C555EPA
2 3 4 5 6
APPLICATIONS
s s s s s Fixed Frequency Power Oscillator Voltage Controlled Oscillator Low Power Buck Regulator Supply MOSFET Driver Simple diode inverters and doublers
ORDERING INFORMATION
Part No. TC96C555COA TC96C555CPA TC96C555EOA TC96C555EPA TC96C555MJA Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP
8 7 6 5
GND OUT OUT VDD
VR2 VIN VREF VR1
1 2 3 4
TC96C555COA TC96C555EOA
8 7 6 5
GND OUT OUT VDD
FUNCTIONAL BLOCK DIAGRAM
VDD 3 +4V VREF 4 3V 2 ISOURCE 1V 2V 3V Q1 7 VIN 2V 1V Q3 1 3V Q2 6 OUTPUT B OUTPUT A 8
VREF
VR1
7
VR2
ISINK 5 GND
8
TC96C555-7 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-159
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
ABSOLUTE MAXIMUM RATINGS
SOIC RJ-A .................................................................... 155C/W SOIC RJ-C ....................................................................... 45C/W Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic DIP ......................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW
Supply Voltage ......................................................... +20V Input Voltage, Pin 1 or 4 ................. VDD +0.3 to GND -0.3 Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Package Thermal Resistance CerDIP RJ-A ................................................................ 150C/W CerDIP RJ-C ................................................................... 50C/W PDIP RJ-A .................................................................... 125C/W PDIP RJ-C ....................................................................... 42C/W ELECTRICAL CHARACTERISTICS: unless otherwise specified TA = +25C with 5V VDD 18V. Symbol Parameter
Pin 4 Input Current for ISOURCE Control Pin 1 Input Current for ISINK Control
Test Condition
(VREF - VR1) / RCHG Fig. 2 (VREF - VR2) / RDIS Fig. 2 VDD = 15V, IREF = 10A VDD = 7V to 18V IREF = 0 to 1mA - 55 Temp 125C
Min
5.0 5.0 3.8 -- -- -- -- 2.85 0.85
Typ
-- -- 4 0.6 0.1 -- 1100 3.0 1 2 1 1.0 8
Max
150 150 4.2 1 0.2 5 2000 3.15 1.15 2.2 1.2 1.1 15
Unit
A A V %/V %/mA % ppm/C V V V V V mA
Programmable Current Range
Reference Section
VREF Line Regulation of VREF Load Regulation of VREF VDRIFT TCVREF VR1, VR2 VREF - VR Vih Vil Vih - Vil IREF VREF Drift Over Lifetime VREF Tempco Voltage at Pin 1 & 4 Voltage Across RCHG and RDIS Pin 2, High Switching Threshold Pin 2, Low Switching Threshold Delta High to Low Threshold VREF Pin 3 Short to GND Pin 5 VDD = 15V VDD = 15V VDD = 15V VDD = 15V
1.8 0.8 0.9 --
ELECTRICAL CHARACTERISTICS: unless otherwise specified TA = +25C with 10V VDD 18V:
Symbol Oscillator
Voltage Stability Temperature Stability VDD = 7 to 18V - 55 Temp 125C IDD0 VIN 3V C1 = 1800pF C1 = 1800pF C1 = 1800pF C1 = 1800pF - - - - - - - VDD - 0.025 - 1 0.4 2 23 20 140 100 - - 3.5 2.5 3 5 - 3 30 30 180 140 - 0.025 5 5 - %/V %/C mA nsec nsec nsec nsec V V A
Parameter
Test Condition
Min
Typ
Max
Unit
Power Supply
Power Supply Current
Switching Time1
tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time High Output Voltage Low Output Voltage Output Res Hi State Output Res Lo State Peak Output Current
Output
VOH VOL RO RO IPK
4-160
VDD = 15V VDD = 15V
VDD = 18V
- -
-
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
ELECTRICAL CHARACTERISTICS: specifications over operating temperature range unless otherwise
specified 5.0V < VDD <18V. Test Condition
(VREF-VR1) / RCHG Fig. 2 (VREF-VR2) / RDIS Fig. 2 IREF = 10A
1
Symbol
Parameter
Pin 4 Input Current for ISOURCE Control Pin 1 Input Current for ISINK Control
Min
5.0 5.0 3.6 - - - - 2.7 0.8 1.75 0.75 0.9 - - - - - - - - VDD - 0.025 -
Typ
- - 4 0.9 0.1 - 1100 3 1 2 1 1.0 - 1 0.4 - 33 30 180 160 - - 4.5 3.4 2
Max
100 100 4.4 1.5 0.4 5 2000 3.3 1.2 2.25 1.25 1.1 18 8 - 4 40 40 220 200 - 0.025 6 6 -
Unit
A A V %/V %/mA % ppm/C V V V V V mA %/V %/C mA nsec nsec nsec nsec V V A
2 3 4 5 6 7
Programmable Current Range
Reference Section
VREF VDD = 7 to 18V IREF = 0 to 1mA VDRIFT TCVREF VR1, VR2 VREF-VR Vih Vil Vih to Vil IREF VDD = 15V Line Regulation of VREF Load Regulation of VREF VREF Drift Over Lifetime VREF Tempco Voltage Pin at 1 and 4 Voltage Across RCHG and RDIS Pin 2, High Switching Threshold Pin 2, Low Switching Threshold Delta High to Low Threshold VREF Pin 3 Short to GND Pin 5
- 55 Temp 125C VDD = 15V VDD = 15V VDD = 15V VDD = 15V VDD = 15V VDD = 7V to 18V - 55 Temp 125C 0 VIN 3V C1 = 180pF, Fig. 1 C1 = 1800pF, Fig. 1 Fg. 1 Fig. 1
Oscillator
Voltage Stability Temperature Stability
Power Supply
IDD Power Supply Current
Switching
tR tF tD1 tD2
Time1
Rise Time Fall Time Delay Time Delay Time High Output Voltage Low Output Voltage Output Res Hi State Output Res Lo State Peak Output Current
Output
VOH VOL RO RO IPK
NOTE :
1Switching
VDD = 15V VDD = 15V
VDD = 18V
- - -
times guaranteed by design. The typical values are from 125C measurements.
Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the Operational Specifications is not implied. Any exposure to Absolute Maximum Rating Conditions may affect device reliability.
8
TELCOM SEMICONDUCTOR, INC.
4-161
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
TYPICAL CHARACTERISTICS
Fall Time vs. Capacitive Load VDD = 5V, 10V, 18V
500 Freq = 55KHz Temp = 25C 500
Rise TIme vs. Capacitive Load VDD = 5V, 10V, 18V
Freq = 55KHz Temp = 25C
Fall Time (nsec)
Rise Time (nsec)
400
400
5V 300
5V
300 10V 200
200
10V
100
100 18V 0 100
18V
0 100
1000 CLOAD (pF)
10,000 20,000
1000 CLOAD (pF)
10,000 20,000
60
Rise Time vs. Temperature VDD = 5V, 10V, 15V
VIN = 0 - 5V CLOAD = 1000pF
60
Fall Time vs. Temperature VDD = 5V, 10V, 15V
VIN = 0 - 5V CLOAD = 1000pF
50
50
Rise Tme (nsec)
Fall Time (nsec)
40
5V 10V
40
30
30
5V 10V
20
15V
20
15V
10 -55 -35 -15
5
25
45
65
85
105 125
10 -55 -35 -15
5
25
45
65
85
105 125
Temperature (C) Delay Time vs. Supply Voltage Temp = -55C
140 350
Temperature (C) Delay Time vs. Supply Voltage Temp = 25C
300 250 200
TD1
TD1
Delay Time (nsec)
120 100 80 60 40 20
0
VIN = 0 - 5V CLOAD = 1000pF
TD2
Delay Time (nsec)
150 100 50
0
TD2
VIN = 0 - 5V CLOAD = 1000pF
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage
4-162
Supply Voltage
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
TYPICAL CHARACTERISTICS (Cont.)
Delay Time vs. Supply Voltage Temp = 125C
250
250
1
Delay Time vs. Temperature VDD = 18V
2 3
Delay Time (nsec)
TD1 TD2
150
Delay Time (nsec)
200
200
150 TD1 100 TD2
100 50
VIN = 0 - 5V CLOAD = 1000pF
50
VIN = 0 - 5V CLOAD = 1000pF
0
4
6
8
10
12
14
16
18
0 -55 -35 -15
5
25
45
65
85
105 125
Supply Voltage Oscillation Frequency vs. Supply Voltage Temp at 25C, - 55C, 125C
11.9
125C
Temperature (C)
11.9
Oscillation Frequency vs. Temperature VS = 5V, 10V, 18V
4 5
Frequency (kHz)
Frequency (kHz)
11.7 11.5 11.3 11.1 -55C 10.9 10.7
RDIS = 22K RCHG = 44K C = 1000pF
11.7 11.5
18V
15V
10V
25C
11.3 11.1 10.9 10.7
VDIS = 22K RCHG = 44K C = 1000pF
4
6
8
10
12
14
16
18
-55 -35 -15
5
25
45
65
85
105 125
Supply Voltage IDD vs. Supply Voltage Temp = - 55C, 25C, 125C
3000 3000
Temperature (C)
6 7
IDD vs. Supply Voltage Temp = - 55C, 25C, 125C
2500 2000
2500 2000
-55C
IDD (A)
IDD (A)
-55C
1500
25C
1500
25C
1000
125C
1000
125C
500
0
VIN = 0V
500
VIN = 3V
0
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage
Supply Voltage
4-163
8
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
TYPICAL CHARACTERISTICS (Cont.)
IDD vs. Temperature VDD = 5V, 10V, 15V
2500
15V
IDD vs. Temperature VDD = 5V, 10V, 15V
2000
15V 10V 5V
2000 1500
10V
IDD (A)
IDD (A)
5 25 45 65 85 105 125
1500
5V
1000
1000
500
VIN = 3V
500
VIN = 0V 0 -55 -35 -15
0 -55 -35 -15
5
25
45
65
85
105 125
Temperature (C) VREF vs. Supply Voltage Temp at 25C, - 55C, 125C
4.2 4.1
-55C
4.0 4.1
10V 5V 18V
Temperature (C)
VREF vs. Temperature VDD = 5V, 10V, 18V
4.0
VREF
3.9 3.8 3.7
125C
VREF
8 10 12 14 16 18
25C
3.9
3.8
4
6
3.7 -55 -35 -15
5
25
45
65
85
105 125
Supply Voltage ROUT vs. Supply Voltage Output HIGH
10 8
125C
Temperature (C) ROUT vs. Supply Voltage Output LOW
7
6 5
125C
ROUT ()
6
25C
ROUT ()
4
25C
3 2 1
4
-55C
-55C
2
VIN = 0V VIN = 3V
0
0
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage
4-164
Supply Voltage
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
TYPICAL CHARACTERISTICS (Cont.)
ROUT vs. Temperature Output HIGH
10 7 6 8 5
1
ROUT vs. Temperature Output LOW
2 3
ROUT (Ohm)
6
5V
ROUT (Ohm)
4
5V
4
10V
3 2
10V
2 18V
VIN = 0V
1 18V
VIN = 3V
0 -55 -35 -15
5
25
45
65
85
105 125
0 -55 -35 -15
5
25
45
65
85
105 125
Temperature (C)
Temperature (C)
APPLICATIONS
The oscillator timing can easily be controlled by two external resistors, RCHG and RDIS, and capacitor C. RCHG and RDIS set the two constant current sources for charging and discharging C. The source current is always flowing when in operation. When the capacitor has charged to a 2V threshold, the current sink circuit is enabled to discharge the
VDD = 18V +5V TEST CIRCUIT 8 VREF 4 2 INPUT 6 1 GND 100KHz Square Wave tRISE = tFALL 10nsec 5 C1 = 1800pF TC96C555 7 OUTPUT OUTPUT 0V 10% 10% 18V 90% 1F WIMA MKS-2 0.1F CERAMIC INPUT 10% 0V tD1 tD2
capacitor to the 1V threshold. When 1V is reached, the current sink turns OFF to start another cycle. Resistor RCHG is connected from VREF at Pin 3 to VR1 Pin 4 to program the charging current. Current is set with resistor RDIS connected from VREF Pin 3 to VR2 Pin 1. Both currents can range from 5A to 150A.
4 5
90%
3
tF
tR 90%
Figure 1. Output Switching Time
VDD 8 3 RCHG 4 VR1 RDIS 2 VIN C Q3 1 VR2 ISINK 2V 1V 6 Q2 GND 1V 2V 3V ISOURCE Q1 7 OUTPUT VREF 4V VREF 10F
6 7
TCHG
2V VIN 1V VDD OUTPUT 0V
5
Figure 2. Fixed Frequency Power Oscillator
Figure 3. VIN and Output Waveform 4-165
8
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
APPLICATIONS (Cont.)
Maximum Frequency RCHG = 13K, Rdis = 6.8K
900 700 Frequency in KHz 500 400 300 200
100 10 20 30 40 C in pF 50 60 80 100
Minimum Frequency RCHG = 200K, Rdis = 100K
100K 10K Frequency in Hz 1K 100 10 1 0.1 10pF 100pF .001F .01F C in pF
.1F
1F
This circuit will convert a 6 to 15V input to a 5V output of 200 milliamps. Normal operating frequency is 50kHz. Peak to peak ripple is 50 millivolts. A change from 100mA to 200mA produces a 50mV peak change in VOUT, with recovery in 200s. The TC96C555 is used here as a duty cycle modulator in a buck output circuit. The source current is modulated to control the duty cycle. Sink current is fixed at 100A with a resistor (R4) of 10K. Transistor Q1, (2N2907A), is used for current modulation into TC96C555 Pin 4, the charge current program input. Shunt regulator TL431 is used for voltage sense and regulation feedback. The TL431 has an internal reference of 2.495V. Terminal R is compared with this reference to control conduction of cathode C to anode A. R2 and R3 are selected to give proper bias current to the TL431. C2 and R7 are for loop compensation and are optimized for a recovery time of 200s. The TC96C555 outputs, Pin 7 and 6, are tied together so that when output is HIGH, current conducts from VDD Pin 8 to output Pin 7 to charge the inductor, L1. When output is OFF or LOW, energy stored in L1 will continue to conduct through TC96C555 Pin 6 to the lower internal MOSFET and out to Pin 5, the ground return. This circuit does not have current limiting. A fuse is recommended for protection. Figure 6 shows the duty cycle as a function of the source current. Figure 8 shows the frequency vs control voltage.
Figure 4. Typical Maximum and Minimum Operating Frequency vs. Capacitor
+12V
R1 10K Q1 2N2907A
R2 560
C4 .1F
C5 100F
8 4 VR1 VDD
3 R4 10K C6 4.7F
VREF
OUT OUT
7 L1, 3mH C3 100F 10K R5 C2 .1F R3, 390 C A TL431 R 10K R6 100K R7 VOUT
1
VR2 TC96C555
6
2
VIN
C1 470pF
GND 5
Figure 5. +5V Buck Regulator Power Supply with 82% Efficiency at 200mA Output 4-166
TELCOM SEMICONDUCTOR, INC.
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555
APPLICATIONS (Cont.)
Duty Cycle vs. Charge Current Frequency in kHz
100 16 38 50 38 16
1
By connecting both resistors, RCHG and RDIS, to a voltage source instead of connecting to the 4V reference of Pin 3, one can increase or decrease the output frequency. Increasing the voltage source to 5V will double the oscillator frequency by doubling the voltage across both RCHG and RDIS. Decreasing the voltage source to 3.5V will drop the frequency in half.
2 3 4
80
Duty Cycle in %
60
Voltage Controlled Oscillator RCHG = 51k, Rdis = 25.5k
1000K
40
100K
20
10pF 100pF
Frequency in Hz
10K
1000pF
0 10 20 30 40 50 60 70 Charge Current in A ISINK = 100A 80 90 100
1K
0.01F
Figure 6. Duty Cycle vs. Charge Current
100
0.1F
+12V
10 3.25V 3.5V 4V Control Voltage 5V 7V
Figure 8. Frequency vs Control
.1F
5 6 7
8 CONTROL VOLTAGE SOURCE 3 RCHG VREF VDD OUT OUT VR1 TC96C555 7 OUTPUT
4
6
2 RDIS C
VIN
1
VR2
GND
Figure 7. Voltage Controlled Power Oscillator
8
TELCOM SEMICONDUCTOR, INC.
4-167

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